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Invited speakers
- Matteo Meneghini,
title: Role of defects in limiting the performance and lifetime of UV-C AlGaN-based LEDs - Motoaki Iwaya,
title: Enhancement of carrier injection efficiency in AlGaN-based UV-B semiconductor lasers using polarization doping in p-type AlGaN cladding layers - Tim Wernicke,
title: TBA - Michael Heuken,
title: 40 years of innovation in MOCVD technology - Hiroshi Fujioka,
title: TBA - Young Duck Kim,
title: Carbon color centers in hexagonal boron nitride for efficient deep ultraviolet light emission - M. Ajmal Khan,
title: High Quality of DC-sputtered AlN Assisted by High Temperature Annealing and Demonstration of 0.41% Efficient far-UVC LED - Guillaume Cassabois,
title: The carbon dimer in boron nitride - Chris G. Van de Walle,
title: Doping and quantum defects in BN - Miłosz Grodzicki,
title: TBA - Martin Heilmann,
title: Advancements in AlGaN Epitaxy for UVC LEDs at ams OSRAM - Ray-Hua Horng,
title: Study on the Wide Bandgap (AlxGa1-x)2O3 Epilayer grown on Sapphire Substrate by MOCVD - Kazuhiro Ohkawa,
title: Role of AlN and AlGaN barriers in InGaN quantum wells of highly efficient red LEDs - Nando Kaminski,
title: TBA - Suresh Sundaram,
title: Boron nitride growth by MOVPE and its applications - Peter Parbrook,
title: Al-rich AlGaN/AlGaN heterostructures to enable the next generation of RF and power electronic devices - Kentaro Kaneko,
title: TBA - Wilfried Desrat,
title: Structural and optical characterizations of bulk rhombohedral boron nitride grown by an iron flux - Igor Prozheev,
title: Various defects in AlGaN alloys - Masataka Higashiwaki,
title: TBA